Infineon achieves world's first 300mm power gallium nitride (GaN) wafer technology

Infineon announced today that it has successfully developed the world's first 300mm (12-inch) power GaN (gallium nitride) wafer technology and has taken the lead in mastering this breakthrough technology in the existing scalable mass production environment.

Compared to 200mm wafers, chip production on 300mm wafers is more advanced and efficient in technology, and the larger wafer diameter can provide 2.3 times more chips.

GaN-based power semiconductors are rapidly being applied in industrial, automotive, consumer, computing, and communication applications, including AI system power supplies, solar inverters, chargers and adapters, as well as motor control systems. In addition, the scalability of 300mm wafers ensures supply stability for top-tier customers.

Infineon Technologies CEO Jochen Hanebeck stated in the announcement, "This technological breakthrough will change the rules of the industry, allowing us to unleash the full potential of gallium nitride. After the acquisition of GaN Systems nearly a year ago, we once again prove our determination to become the leader in the rapidly growing GaN market. As a leader in power systems, Infineon has mastered all three relevant materials: silicon, silicon carbide, and gallium nitride."

IT Home learned from Infineon's announcement that in its power wafer fab in Villach, Austria, the company successfully manufactured 300mm GaN wafers on its existing 300mm silicon production line and utilized its manufacturing capabilities on the integrated pilot production line for 300mm silicon and 200mm GaN. Infineon stated that it will further expand GaN production capacity according to market demand